BSL308CH6327XTSA1 vs BSP129H6327XTSA1 비교

다음의 상세 나란히 비교: BSL308CH6327XTSA1 제조: Infineon 및 BSP129H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSL308CH6327XTSA1 BSP129H6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.21 $0.30
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
패키지 PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT223-4 (SOT-223, 3+Tab)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
동작 온도 범위 -55 °C to +150 °C —
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS 상태 Compliant Compliant
Lead-Free Yes Yes
할로겐 프리 Yes (per Infineon product family convention) —
FET Type — N-Channel, Depletion Mode
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
동작 온도 — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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