BSL308CH6327XTSA1 vs BSP129H6327XTSA1 Сравнение
Подробное сравнение бок о бок BSL308CH6327XTSA1 от Infineon и BSP129H6327XTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ АктивенСравнение характеристик
| Параметр | BSL308CH6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,21 | $0,30 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Корпус | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223, 3+Tab) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Диапазон рабочих температур | -55 °C to +150 °C | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Без галогенов | Yes (per Infineon product family convention) | — |
| FET Type | — | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| On-Resistance RDS(on) max | — | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Рабочая температура | — | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |