BSL308CH6327XTSA1 vs BSP129H6327XTSA1 对比

详细并排对比 BSL308CH6327XTSA1 出自 Infineon 和 BSP129H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 ✓ 量产中

规格对比

参数 BSL308CH6327XTSA1 BSP129H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.21 $0.30
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
封装 PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT223-4 (SOT-223, 3+Tab)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
工作温度范围 -55 °C to +150 °C —
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
无卤 Yes (per Infineon product family convention) —
FET Type — N-Channel, Depletion Mode
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
工作温度 — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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