BSL308PEH6327XTSA1 vs BSL215CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL308PEH6327XTSA1 von Infineon und BSL215CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSL308PEH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS |
| FET Type | 2x P-Channel (Dual) | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Gehäuse | PG-TSOP6-6 (TSOT-23-6) | — |
| Configuration | Dual, common source | Half-bridge (1 N + 1 P) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +150 C (TJ) | -55C to +150C |
| Automotive Qualification | AEC-Q101 | — |
| Anzahl der Pins | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Gehäuse / Bauform | — | PG-TSOP6-6 (6-pin TSOP) |
| Technology | — | OptiMOS trench MOSFET |
| MSL-Level | — | 1 (unlimited) |
| Lead-Free | — | Yes |