BSL308PEH6327XTSA1 vs BSL215CH6327XTSA1 对比
详细并排对比 BSL308PEH6327XTSA1 出自 Infineon 和 BSL215CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSL308PEH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.21 | $0.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS |
| FET Type | 2x P-Channel (Dual) | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| 封装 | PG-TSOP6-6 (TSOT-23-6) | — |
| Configuration | Dual, common source | Half-bridge (1 N + 1 P) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +150 C (TJ) | -55C to +150C |
| Automotive Qualification | AEC-Q101 | — |
| 引脚数 | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| 封装 / 外壳 | — | PG-TSOP6-6 (6-pin TSOP) |
| Technology | — | OptiMOS trench MOSFET |
| MSL 等级 | — | 1 (unlimited) |
| Lead-Free | — | Yes |