BSL308PEH6327XTSA1 vs BSL215CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSL308PEH6327XTSA1 por Infineon y BSL215CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSL308PEH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,21 | $0,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS |
| FET Type | 2x P-Channel (Dual) | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Encapsulado | PG-TSOP6-6 (TSOT-23-6) | — |
| Configuration | Dual, common source | Half-bridge (1 N + 1 P) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55 C to +150 C (TJ) | -55C to +150C |
| Automotive Qualification | AEC-Q101 | — |
| Número de pines | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| Estado RoHS | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Encapsulado / Carcasa | — | PG-TSOP6-6 (6-pin TSOP) |
| Technology | — | OptiMOS trench MOSFET |
| Nivel MSL | — | 1 (unlimited) |
| Lead-Free | — | Yes |