BSP125H6327XTSA1 vs IRLL024ZTRPBF Vergleich
Detaillierter Direktvergleich von BSP125H6327XTSA1 von Infineon und IRLL024ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP125H6327XTSA1 | IRLL024ZTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSP125H6327XTSA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | HEXFET Power MOSFET (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-3 + tab) | SOT-223 (TO-261-4) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (Unlimited) | 1 (unlimited floor life) |
| Qualification | Automotive / Industrial grade | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |