BSP125H6327XTSA1 vs IRLL024ZTRPBF Сравнение
Подробное сравнение бок о бок BSP125H6327XTSA1 от Infineon и IRLL024ZTRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSP125H6327XTSA1 | IRLL024ZTRPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,38 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSP125H6327XTSA1 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | HEXFET Power MOSFET (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Корпус | PG-SOT223-4 (SOT-223-3 + tab) | SOT-223 (TO-261-4) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (Unlimited) | 1 (unlimited floor life) |
| Qualification | Automotive / Industrial grade | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |