BSP129H6327XTSA1 vs BSP92PH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSP129H6327XTSA1 von Infineon und BSP92PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSP129H6327XTSA1 BSP92PH6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,30 $0,31
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Gehäuse PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-4)
Montageart Surface Mount Surface Mount
Betriebstemperatur -55 C to +150 C (junction) -55C to +150C (Tj)
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS-Status Compliant —
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Transistortyp — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Pin-Anzahl — 4 (Gate, Drain, Drain, Source)

Datenblätter & Ressourcen

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