BSP129H6327XTSA1 vs BSP92PH6327XTSA1 비교
다음의 상세 나란히 비교: BSP129H6327XTSA1 제조: Infineon 및 BSP92PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSP129H6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.30 | $0.31 |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 240 V | -250 V |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| 패키지 | PG-SOT223-4 (SOT-223, 3+Tab) | PG-SOT223-4 (SOT-223-4) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55 C to +150 C (junction) | -55C to +150C (Tj) |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | — |
| dv/dt Ruggedness | Yes (rated) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Process Technology | SIPMOS (vertical DMOS) | — |
| Drain Terminal | Tab (pin 4) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| 트랜지스터 유형 | — | P-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) | — | -260 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Channel Polarity | — | P-Channel |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| 핀 수 | — | 4 (Gate, Drain, Drain, Source) |