BSP129H6327XTSA1 vs BSP92PH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP129H6327XTSA1 by Infineon and BSP92PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP129H6327XTSA1 BSP92PH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.31
FET Type N-Channel, Depletion Mode β€”
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) at TA=25C 350 mA β€”
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) β€”
Power Dissipation (PD) at TA=25C 1.8 W β€”
Package PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-4)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +150 C (junction) -55C to +150C (Tj)
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] β€”
dv/dt Ruggedness Yes (rated) β€”
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Process Technology SIPMOS (vertical DMOS) β€”
Drain Terminal Tab (pin 4) β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS P-Channel Small-Signal Power MOSFET
Transistor Type β€” P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) β€” -260 mA (Ta)
Power Dissipation (PD) β€” 1.8 W (Ta)
Channel Polarity β€” P-Channel
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Lead-Free / RoHS β€” Yes / Compliant
Pin Count β€” 4 (Gate, Drain, Drain, Source)

Datasheets & Resources

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