BSP315PH6327XTSA1 vs BSS169H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP315PH6327XTSA1 von Infineon und BSS169H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP315PH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,15 |
| FET Type | P-Channel | N-Channel Depletion Mode |
| Technology | OptiMOS (enhancement mode) | Depletion-mode vertical DMOS |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -1.17 A (Ta) | 170 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) | 360 mW (Ta) |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | Pinch-off approx. -3.5 V (typical) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | [DATA_NEEDED: junction/ambient operating temperature range] |
| Gehäuse | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Pin-Anzahl | — | 3 |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |