BSP315PH6327XTSA1 vs BSS169H6327XTSA1 对比

详细并排对比 BSP315PH6327XTSA1 出自 Infineon 和 BSS169H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 量产中
Infineon
BSS169H6327XTSA1 BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 ✓ 量产中

规格对比

参数 BSP315PH6327XTSA1 BSS169H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.31 $0.15
FET Type P-Channel N-Channel Depletion Mode
Technology OptiMOS (enhancement mode) Depletion-mode vertical DMOS
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) 170 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 360 mW (Ta)
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] Pinch-off approx. -3.5 V (typical)
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
工作温度范围 -55 C to +150 C (junction) [DATA_NEEDED: junction/ambient operating temperature range]
封装 PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 100 V
RDS(on) Maximum — 6 Ohm at VGS=0 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute maximum rating]
引脚数量 — 3
RoHS 状态 — Compliant
Lead-Free — Yes
Drain Current at 25C — 170 mA continuous
Typical RDS(on) — [DATA_NEEDED: typical RDS(on) value]

数据手册与资源

浏览全部产品 创建 BOM 获取报价