BSP92PH6327XTSA1 vs BSP88H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP92PH6327XTSA1 von Infineon und BSP88H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP92PH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,21 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| Transistortyp | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W at Ta=25 C |
| Gehäuse | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (SOT-223-3) |
| Montageart | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Betriebstemperatur | -55C to +150C (Tj) | -55 C to +150 C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | 6 ohm typical at VGS=10 V |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Pin-Anzahl | 4 (Gate, Drain, Drain, Source) | — |
| Configuration | — | Single |
| Technology | — | SIPMOS (planar enhancement mode) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |