BSP92PH6327XTSA1 vs BSS87H6327FTSA1 Vergleich
Detaillierter Direktvergleich von BSP92PH6327XTSA1 von Infineon und BSS87H6327FTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP92PH6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,18 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| Transistortyp | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | 240 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) | 1 W (Ta) |
| Gehäuse | PG-SOT223-4 (SOT-223-4) | PG-SOT89-4-2 (SOT-89) |
| Montageart | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Betriebstemperatur | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Pin-Anzahl | 4 (Gate, Drain, Drain, Source) | 3 (Gate / Drain / Source) |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS-Status | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |