BSR315PH6327XTSA1 vs BSP125H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSR315PH6327XTSA1 von Infineon und BSP125H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSR315PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR315PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS P-Channel | — |
| FET Type | P-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) | -620 mA (Ta) | 120 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 1.8 W (Ta) |
| On-State Resistance (RDS(on)) | 800 mOhm @ -620 mA, -10 V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max VGS) | [DATA_NEEDED: VGS(th) typical value] |
| Input Capacitance (Ciss) | 176 pF @ 25 V | — |
| Total Gate Charge (Qg) | 6 nC @ 10 V | — |
| Betriebstemperaturbereich | -55 C to +150 C (TJ) | — |
| Gehäuse | PG-SC59-3 / SOT-23-3 | PG-SOT223-4 (SOT-223-3 + tab) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| Packaging | Tape & Reel (TR) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product family marking) | — |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Betriebstemperatur | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| MSL-Level | — | 1 (Unlimited) |
| Qualification | — | Automotive / Industrial grade |