BSR315PH6327XTSA1 vs BSP125H6327XTSA1 对比
详细并排对比 BSR315PH6327XTSA1 出自 Infineon 和 BSP125H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSR315PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR315PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS P-Channel | — |
| FET Type | P-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) | -620 mA (Ta) | 120 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 1.8 W (Ta) |
| On-State Resistance (RDS(on)) | 800 mOhm @ -620 mA, -10 V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max VGS) | [DATA_NEEDED: VGS(th) typical value] |
| Input Capacitance (Ciss) | 176 pF @ 25 V | — |
| Total Gate Charge (Qg) | 6 nC @ 10 V | — |
| 工作温度范围 | -55 C to +150 C (TJ) | — |
| 封装 | PG-SC59-3 / SOT-23-3 | PG-SOT223-4 (SOT-223-3 + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 | — |
| Packaging | Tape & Reel (TR) | — |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product family marking) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| 工作温度 | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| MSL 等级 | — | 1 (Unlimited) |
| Qualification | — | Automotive / Industrial grade |