BSR802NL6327HTSA1 vs BSP316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSR802NL6327HTSA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSR802NL6327HTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,21 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | SIPMOS (P-channel MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Gehäuse | PG-SC59-3 (SC-59 / SOT-346) | PG-SOT223-4 (TO-261-4) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Qualification | Automotive | — |
| RoHS-Status | Compliant | Compliant |
| Pin-Anzahl | 3 | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| Anzahl der Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| MSL-Level | — | 1 |
| Packaging | — | Tape & Reel (H6327 suffix) |