BSR802NL6327HTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSR802NL6327HTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSR802NL6327HTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | SIPMOS (P-channel MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Package | PG-SC59-3 (SC-59 / SOT-346) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | — |
| Qualification | Automotive | — |
| RoHS Status | Compliant | Compliant |
| Pin Count | 3 | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | — | -55 C to +150 C (junction) |
| Number of Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| MSL Level | — | 1 |
| Packaging | — | Tape & Reel (H6327 suffix) |