BSS138L vs 2N7002LT1G Vergleich
Detaillierter Direktvergleich von BSS138L von onsemi und 2N7002LT1G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS138L | 2N7002LT1G |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement Mode | — |
| VDS Drain-Source Voltage | 50 V | — |
| Continuous Drain Current (Ta) | 200 mA | — |
| Power Dissipation (Ta) | 350 mW | — |
| RDS(on) Max | 3.5 ohm | — |
| Technology | Trench MOSFET, high cell density | MOSFET |
| Gate Type | Logic Level | — |
| Gehäuse | SOT-23-3 | SOT-23-3 (TO-236) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged, reliable | — |
| Eingangskapazität | [DATA_NEEDED: Ciss] | — |
| VGS Gate-Source Voltage | [DATA_NEEDED: VGS max rating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Packaging | 3000 units per reel (tape and reel) | [DATA_NEEDED: packaging type] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Anzahl der Pins | — | 3 |
| Kategorie | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |