BSS138L vs 2N7002LT1G Comparación
Comparación detallada lado a lado de BSS138L por onsemi y 2N7002LT1G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS138L | 2N7002LT1G |
|---|---|---|
| Marca | onsemi | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,02 | $0,02 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement Mode | — |
| VDS Drain-Source Voltage | 50 V | — |
| Continuous Drain Current (Ta) | 200 mA | — |
| Power Dissipation (Ta) | 350 mW | — |
| RDS(on) Max | 3.5 ohm | — |
| Technology | Trench MOSFET, high cell density | MOSFET |
| Gate Type | Logic Level | — |
| Encapsulado | SOT-23-3 | SOT-23-3 (TO-236) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged, reliable | — |
| Capacitancia de entrada | [DATA_NEEDED: Ciss] | — |
| VGS Gate-Source Voltage | [DATA_NEEDED: VGS max rating] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Packaging | 3000 units per reel (tape and reel) | [DATA_NEEDED: packaging type] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Número de pines | — | 3 |
| Categoría | — | Small Signal MOSFET |
| Manufacturer | — | onsemi (ON Semiconductor) |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |