BSS214NH6327XTSA1 vs BSS314PEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NH6327XTSA1 von Infineon und BSS314PEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NH6327XTSA1 | BSS314PEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,15 |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | MOSFET (Metal Oxide) |
| Gehäuse | SOT-23 (PG-SOT23), 3 pins | PG-SOT23-3 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 C to +150 C (TJ) |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) @ TA=25C | — | -1.5 A |
| Power Dissipation (PD) @ TA=25C | — | 500 mW |
| RDS(on) max @ VGS=-10V | — | 140 mOhm |
| RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at -4.5V VGS] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (max Rds(on)) | — | -4.5 V, -10 V |
| Pin Configuration | — | G-D-S (Gate, Drain, Source) |