BSS214NH6327XTSA1 vs BSS314PEH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS214NH6327XTSA1 por Infineon y BSS314PEH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS214NH6327XTSA1 | BSS314PEH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,09 | $0,15 |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | MOSFET (Metal Oxide) |
| Encapsulado | SOT-23 (PG-SOT23), 3 pins | PG-SOT23-3 (SOT-23-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55 C to +150 C (TJ) |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) @ TA=25C | — | -1.5 A |
| Power Dissipation (PD) @ TA=25C | — | 500 mW |
| RDS(on) max @ VGS=-10V | — | 140 mOhm |
| RDS(on) max @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at -4.5V VGS] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (max Rds(on)) | — | -4.5 V, -10 V |
| Pin Configuration | — | G-D-S (Gate, Drain, Source) |