BSS214NWH6327XTSA1 vs BSS606NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NWH6327XTSA1 von Infineon und BSS606NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NWH6327XTSA1 | BSS606NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Gehäuse | PG-SOT323 (SOT-323-3) | PG-SOT-89 (TO-243AA) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | Automotive (per family page) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Product Family | — | OptiMOS Small Signal/Power |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 3.2 A (Ta) |
| Power Dissipation (PD) | — | 1 W (Ta) |
| On-Resistance (RDS(on)) | — | 60 mΩ max @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| MSL-Level | — | 1 (per SOT-89 family standard) |
| Reel Quantity | — | 1000 pcs |