BSS308PEH6327XTSA1 vs BSS119NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS308PEH6327XTSA1 von Infineon und BSS119NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSS308PEH6327XTSA1 | BSS119NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,12 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Transistortyp | P-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| Gehäuse / Bauform | PG-SOT23 (SOT-23-3) | — |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Qualification | AEC-Q101 Automotive | AEC-Q101 (automotive grade) |
| RoHS-Status | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | Tape & Reel (3,000 pcs/reel) |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Gehäuse | — | PG-SOT23 (SOT-23-3) |
| Lead-Free | — | Yes |
| MSL-Level | — | 1 [DATA_NEEDED: confirm from datasheet] |