BSS316NH6327XTSA1 vs IPT007N06NATMA1 Vergleich
Detaillierter Direktvergleich von BSS316NH6327XTSA1 von Infineon und IPT007N06NATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS316NH6327XTSA1 | IPT007N06NATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $2,84 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-HSOF-8-1 (TOLL) |
| Montageart | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Betriebstemperaturbereich | — | -55 C to +175 C (TJ) |
| Configuration | — | Single N-channel |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |