IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
Teilenummer: IPT007N06NATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.95 | $4,95 |
| 10 | $4.45 | $44,50 |
| 100 | $3.96 | $396,00 |
| 500 | $3.55 | $1.775,00 |
| 1.000 | $3.18 | $3.180,00 |
| 3.000 | $2.84 | $8.520,00 |
IPT007N06NATMA1 Übersicht
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and modulate current in power-conversion circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> FETs -> power MOSFETs. The OptiMOS 5 family from Infineon represents the fifth-generation trench MOSFET platform optimized for low RDS(on), low gate charge, and high avalanche ruggedness, making these parts the workhorse of modern synchronous rectification, motor drive, and hot-swap designs.
Key differentiating features include the 0.75 mOhm maximum RDS(on), industry-leading figure-of-merit (FOM = RDS(on) x QG), and a thermally enhanced PG-HSOF-8-1 package with an exposed source pad that drops thermal resistance dramatically compared with standard SO-8 footprints. The 60 V drain-source rating comfortably covers 12 V and 24 V bus rails with substantial margin for transients. Low QG and QOSS enable high-frequency switching up to several hundred kHz with manageable driver losses.
Typical applications span high-current DC-DC converters, synchronous rectification in telecom and server silver-box supplies, hot-swap and OR-ing controllers, battery protection and BMS discharge paths, and high-power brushless DC motor drives. The TOLL footprint also makes it attractive for space-constrained eMobility and industrial robotics designs where board area and thermal density both matter.
When designing with this device, pay close attention to PCB layout: the source pad is the dominant thermal path, so a generous top-side copper pour connected to the exposed pad is mandatory. Driver placement should minimize the gate-loop inductance to prevent unwanted ringing and dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond a single datasheet summary, giving engineers the cross-reference context needed for second-source qualification.
Drop-in-Alternativen für IPT007N06NATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPT007N06NATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, MSL Level, Operating Temperature Range, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPT007N06N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSZ060NE2LSATMA1
✅ Drop-In✓ Auf Lager
$0.27 / Stück
Datenblatt ansehen →BSC014N06NSATMA1
✅ Drop-In✓ Auf Lager
$0.89 / Stück
Datenblatt ansehen →IPD090N03LGATMA1
✅ Drop-In✓ Auf Lager
$0.34 / Stück
Datenblatt ansehen →BSS316NH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.13 / Stück
Datenblatt ansehen →IPT007N06NATMA1 Grenzwerte & elektrische Eigenschaften
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, TC=25C) | 300 A |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm |
| Power Dissipation (PD, TC=25C) | 375 W |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) |
| Gehäuse | PG-HSOF-8-1 (TOLL) |
| Montageart | Surface Mount |
| Configuration | Single N-channel |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| Halogenfrei | Yes |
| Standard Pack Quantity | 3000 (Tape & Reel) |
IPT007N06NATMA1 Pin-Konfiguration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | SOURCE — Source connection (also ties to exposed pad) |
| Pin 3 | DRAIN — Drain connection (tab) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin PAD | SOURCE — Exposed source pad - thermal and electrical connection |
Sicherer Arbeitsbereich (DC, TC=25C)
Typische Anwendungen
IPT007N06NATMA1 ist geeignet für 6 Anwendungs: 12V / 24V Synchronous Rectification, Hot-Swap and OR-ing Controllers, Battery Protection and BMS Discharge Path, High-Power BLDC Motor Drive, Telecom and Server Silver-Box PSU, Industrial Robotics and Factory Automation.
12V / 24V Synchronous Rectification
The IPT007N06NATMA1 is purpose-built for the synchronous rectifier (sync-FET) position in 12 V and 24 V buck converters where ultra-low conduction loss directly improves efficiency. Its 0.75 mOhm RDS(on) and 60 V VDS rating comfortably exceed the worst-case bus transients seen on a 24 V telecom or server rail. In a typical 500 kHz buck converter the part replaces a Schottky diode on the low-side, cutting rectifier losses by 60-70% and eliminating reverse-recovery charge. Designers should drive the gate with a 10 V driver capable of sinking the QG quickly to keep dead-time short.
Empfohlen
Hot-Swap and OR-ing Controllers
In hot-swap and OR-ing power-path applications, the IPT007N06NATMA1 acts as the main load-switching element that inrush-limits a live backplane. Its 300 A continuous ID handles full-power server and telecom shelves, while the 60 V VDS rating protects against load-dump transients. The low RDS(on) keeps steady-state voltage drop below 30 mV at 40 A, well within ATX and AdvancedTCA hold-up budgets. Designers typically pair this MOSFET with a hot-swap controller that manages the gate ramp and fault response.
Empfohlen
Battery Protection and BMS Discharge Path
For battery management systems in e-mobility, e-bikes, and energy storage, the IPT007N06NATMA1 serves as the low-loss discharge FET in the battery pack. The 60 V rating covers 16S lithium packs, and the 0.75 mOhm RDS(on) minimizes pack self-heating during high-current discharge cycles. Mounted on the TOLL footprint with a large copper pour, junction temperatures stay well below the 175 C limit even at continuous 200 A load. A gate-driver IC handles pre-charge and short-circuit protection sequencing.
Empfohlen
High-Power BLDC Motor Drive
Industrial and e-mobility BLDC motor drives use the IPT007N06NATMA1 in the inverter half-bridge switching position. Its 300 A continuous current rating supports high-torque robotics and small EV traction motors, while the low QG and QOSS enable 50-100 kHz PWM with manageable switching loss. The TOLL footprint keeps the inverter compact enough for in-motor mounting. Designers should co-layout gate-driver and TVS clamp components to keep the gate-loop inductance below 5 nH.
Empfohlen
Telecom and Server Silver-Box PSU
Inside a 48 V-input telecom or hyperscale server PSU, the IPT007N06NATMA1 is the ideal primary-side high-current switch on the 48 V bus, or a secondary-side sync-FET on the 12 V output. The 60 V rating covers 48 V nominal plus full transient margin, and 0.75 mOhm RDS(on) keeps conduction losses below 1% at full load. The TOLL footprint allows very high power density designs, with the part often placed directly under a heatsink clip on the top side of the PCB.
Empfohlen
Industrial Robotics and Factory Automation
Factory automation and industrial robot controllers deploy the IPT007N06NATMA1 in servo-amplifier power stages where hundreds of amps can flow during peak acceleration. The 300 A rating and TOLL footprint allow compact, high-current modules that drop directly into 24 V and 48 V industrial bus architectures. The part's robustness against inductive transients and avalanche events makes it well suited to the harsh switching environment of motor drives. Galvanic isolation of the gate-drive signal is mandatory in such designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPT007N06NATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPT007N06N | BSZ060NE2LSATMA1 | BSC014N06NSATMA1 | IPD090N03LGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) - same | PG-TSDSON-8 (TOLL-class) | PG-TDSON-8 | PG-TO252-3 (DPAK) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 30 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | 300 A | ~50 A | ~50 A | ~90 A |
| On-Resistance (RDS(on) max, VGS=10V) | 0.75 mOhm | 0.75 mOhm | ~6 mOhm | ~1.4 mOhm | ~9 mOhm |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 | OptiMOS 5 | OptiMOS |
| Power Dissipation (PD, TC=25C) | 375 W | 375 W | 89 W | 62 W | 115 W |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Industry-leading RDS(on) in TOLL-class footprint (vs. BSZ060NE2LSATMA1)
- 300 A continuous current in compact TOLL package (vs. BSC014N06NSATMA1)
- 60 V rating covers 24 V industrial bus with margin (vs. IPD090N03LGATMA1)
Designhinweise
The PG-HSOF-8-1 (TOLL) package dissipates 375 W at TC = 25 C, but realistic PCB thermal resistance typically limits steady-state dissipation to 2-5 W without a heatsink. Design 4-6 square inches of top-side copper connected to the exposed source pad, with a thermal via array (12-25 vias) stitching to inner planes. Estimated: with 1 oz copper and 25 vias on FR-4, RthJA is roughly 25-35 C/W, allowing about 4 W steady-state at TA = 70 C before derating.
Minimize the gate-drive loop by placing the gate driver within 5 mm of the gate pin, with the gate-return trace running parallel and adjacent to the gate-drive trace on a separate layer. Avoid running gate traces across or near drain-source copper to keep dv/dt-induced coupling below the Miller turn-on threshold. Use a 10 ohm gate resistor plus a 1 nF source-bypass network to dampen ringing on fast switching edges.
The exposed source pad must be soldered to the PCB for both thermal and electrical reasons; insufficient solder will cause RthJA to rise sharply and may violate the 0.75 mOhm RDS(on) spec due to contact resistance. Follow the Infineon recommended land pattern exactly, including the via-array pitch and pad dimensions. Stencil aperture reduction of 80-90% is recommended to prevent solder-ball formation under the thermal pad during reflow.
Do not exceed VGS of +/-20 V; the gate oxide is thin for low QG and overdrive can permanently damage the device. Do not switch at dv/dt exceeding 10 kV/ns without local gate protection - the Miller coupling on TOLL packages is significant due to the low internal gate resistance. Finally, derate ID by case temperature per the datasheet curve; the 300 A rating assumes TC = 25 C, not TA.
Compliance-Informationen
RoHS compliant per Infineon product declaration. Industrial grade - not AEC-Q101 qualified; for automotive review the Infineon automotive-grade OptiMOS ordering code.