BSZ031NE2LS5ATMA1 vs IRLH5030TRPBF Vergleich

Detaillierter Direktvergleich von BSZ031NE2LS5ATMA1 von Infineon und IRLH5030TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSZ031NE2LS5ATMA1 IRLH5030TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,26 $1,15
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number BSZ031NE2LS5ATMA1 IRLH5030TRPBF
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Betriebs-Sperrschichttemperatur -55 C to +150 C —
Gehäuse PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PQFN-8 (SuperSO8 5x6 mm)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL] —
RoHS-Status Compliant —
Lead-Free Yes —
Halogenfrei Yes —
FET Type — N-Channel
Technology — IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TA=25C — 13 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Total Gate Charge (Qg) — 44 nC
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

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