BSZ031NE2LS5ATMA1 vs IRLH5030TRPBF Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and IRLH5030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveInfineon
IRLH5030TRPBF
IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
IRLH5030TRPBF β ActiveSpecification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PQFN-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| FET Type | β | N-Channel |
| Technology | β | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TA=25C | β | 13 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 9 mOhm |
| Total Gate Charge (Qg) | β | 44 nC |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | β | 3.6 W |
| Power Dissipation at TC=25C | β | 156 W |
| Thermal Resistance to PCB (RthJC) | β | 0.8 C/W |
| Profile Height | β | β€ 0.9 mm |
| Qualification | β | JEDEC standard |
| Rg Tested | β | 100% |
| RoHS Compliance | β | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | β | Yes |