BSZ031NE2LS5ATMA1 vs IRLH5030TRPBF Comparación
Comparación detallada lado a lado de BSZ031NE2LS5ATMA1 por Infineon y IRLH5030TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,26 | $1,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Encapsulado | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PQFN-8 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TA=25C | — | 13 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Total Gate Charge (Qg) | — | 44 nC |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |