BSZ065N03LSATMA1 vs IPG20N06S2L65AATMA1 Vergleich
Detaillierter Direktvergleich von BSZ065N03LSATMA1 von Infineon und IPG20N06S2L65AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ065N03LSATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Gehäuse / Bauform | PG-TSDSON-8-FL (S308) | — |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS Trench MOSFET |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| MSL-Level | 1 | MSL1 (peak reflow 260 C) |
| RoHS-Status | Compliant | Compliant (Green Product) |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Gehäuse | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Betriebstemperatur | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |