BSZ065N03LSATMA1 vs IPG20N06S2L65AATMA1 Comparison
Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ065N03LSATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Package / Case | PG-TSDSON-8-FL (S308) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS Trench MOSFET |
| Operating Temperature Range | -55C to +150C (junction) | — |
| MSL Level | 1 | MSL1 (peak reflow 260 C) |
| RoHS Status | Compliant | Compliant (Green Product) |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Package | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Operating Temperature | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |