BSZ065N03LSATMA1 vs IPG20N06S2L65AATMA1 Comparison

Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N03LSATMA1

BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 βœ“ Active
Infineon
IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

IPG20N06S2L65AATMA1 βœ“ Active

Specification Comparison

Parameter BSZ065N03LSATMA1 IPG20N06S2L65AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 30V OptiMOS
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 12 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 26 W β€”
Package / Case PG-TSDSON-8-FL (S308) β€”
Mounting Type Surface Mount Surface Mount
Configuration Single N-Channel β€”
Technology Trench MOSFET (OptiMOS) OptiMOS Trench MOSFET
Operating Temperature Range -55C to +150C (junction) β€”
MSL Level 1 MSL1 (peak reflow 260 C)
RoHS Status Compliant Compliant (Green Product)
Gate Drive (typical) 4.5 V β€”
FET Type β€” Dual N-Channel (Half Bridge / Independent)
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 20 A (per channel)
Power Dissipation (PD) β€” 43 W
Gate Threshold (VGS(th)) β€” Logic-Level
Package β€” PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Operating Temperature β€” -55 C to +175 C
AEC-Q101 Qualification β€” Yes
Avalanche Tested β€” 100% (per datasheet)
AOI Compatible β€” Yes (wettable flank)

Datasheets & Resources

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