BSZ065N06LS5ATMA1 vs BSZ036NE2LSATMA1 Vergleich
Detaillierter Direktvergleich von BSZ065N06LS5ATMA1 von Infineon und BSZ036NE2LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ065N06LS5ATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 logic-level | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) Max | 65 A | — |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | — |
| Power Dissipation (PD) Max | 46 W | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V | — |
| Input Capacitance (Ciss) | 1.8 nF | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55C to +150C |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| MSL-Level | — | 1 (Unlimited) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |