BSZ065N06LS5ATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 ✓ Active

Specification Comparison

Parameter BSZ065N06LS5ATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 —
Transistor Type N-Channel MOSFET —
Technology OptiMOS™ 5 logic-level —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) Max 65 A —
Drain Current @ Tc (ID, Tc=25°C) 40 A —
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΩ —
Power Dissipation (PD) Max 46 W —
Gate Threshold Voltage (VGS(th)) 2.3 V —
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V —
Input Capacitance (Ciss) 1.8 nF —
Operating Temperature Range -55°C to +150°C -55C to +150C
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
MSL Level — 1 (Unlimited)
Lead-Free — Yes
Gate Drive — Logic-level compatible

Datasheets & Resources

Browse All Products Create BOM Request Quote