BSZ0901NSIATMA1 vs BSG0813NDIATMA1 Vergleich
Detaillierter Direktvergleich von BSZ0901NSIATMA1 von Infineon und BSG0813NDIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ0901NSIATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,34 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | OptiMOS 5 Power Block |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Gehäuse | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | -55 C to +150 C (typical MOSFET range) | [DATA_NEEDED: operating temperature range] |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| RoHS-Status | Compliant | Compliant |
| Configuration | — | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Technology Generation | — | OptiMOS 5 |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Topologie | — | Synchronous buck half-bridge |