BSZ0901NSIATMA1 vs BSG0813NDIATMA1 Comparación
Comparación detallada lado a lado de BSZ0901NSIATMA1 por Infineon y BSG0813NDIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ0901NSIATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,34 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | OptiMOS 5 Power Block |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Encapsulado | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg total] |
| Rango de temperatura de funcionamiento | -55 C to +150 C (typical MOSFET range) | [DATA_NEEDED: operating temperature range] |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Estado RoHS | Compliant | Compliant |
| Configuration | — | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Technology Generation | — | OptiMOS 5 |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Topología | — | Synchronous buck half-bridge |