BSZ0901NSIATMA1 vs BSG0813NDIATMA1 비교

다음의 상세 나란히 비교: BSZ0901NSIATMA1 제조: Infineon 및 BSG0813NDIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0901NSIATMA1 BSG0813NDIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.34 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V OptiMOS 5 Power Block
Technology OptiMOS trench N-channel MOSFET —
FET Type N-Channel N-Channel MOSFET Array (half-bridge / synchronous buck)
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
패키지 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TISON-8 (5.0 x 6.0 mm)
실장 유형 Surface Mount Surface Mount
핀 수 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg total]
동작 온도 범위 -55 C to +150 C (typical MOSFET range) [DATA_NEEDED: operating temperature range]
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 상태 Compliant Compliant
Configuration — High-side + Low-side, integrated
Low-Side Continuous Drain Current (ID) — 19 A
High-Side Continuous Drain Current (ID) — 33 A
Power Dissipation (PD) — 2.5 W
RDS(on) - Low-Side — [DATA_NEEDED: RDS(on) low-side @ VGS]
RDS(on) - High-Side — [DATA_NEEDED: RDS(on) high-side @ VGS]
Technology Generation — OptiMOS 5
MSL 레벨 — 1 (per JEDEC J-STD-020)
토폴로지 — Synchronous buck half-bridge

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