BSZ0901NSIATMA1 vs BSG0813NDIATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSG0813NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSG0813NDIATMA1
BSG0813NDIATMA1 - 25V 19A/33A OptiMOS 5 Power Block | Infineon
BSG0813NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | OptiMOS 5 Power Block |
| Technology | OptiMOS trench N-channel MOSFET | β |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | [DATA_NEEDED: operating temperature range] |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Configuration | β | High-side + Low-side, integrated |
| Low-Side Continuous Drain Current (ID) | β | 19 A |
| High-Side Continuous Drain Current (ID) | β | 33 A |
| Power Dissipation (PD) | β | 2.5 W |
| RDS(on) - Low-Side | β | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | β | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Technology Generation | β | OptiMOS 5 |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Topology | β | Synchronous buck half-bridge |