BSZ0901NSIATMA1 vs BSZ0904NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSZ0901NSIATMA1 von Infineon und BSZ0904NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ0901NSIATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,34 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS (N-channel power MOSFET) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 18 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Gehäuse | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Betriebstemperaturbereich | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Qualification | — | JEDEC qualified for target applications |
| Lead Plating | — | Pb-free |
| Halogenfrei | — | Yes |