BSZ0901NSIATMA1 vs BSZ0904NSIATMA1 Comparação
Comparação detalhada lado a lado de BSZ0901NSIATMA1 por Infineon e BSZ0904NSIATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSZ0901NSIATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,34 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS (N-channel power MOSFET) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 18 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Encapsulamento | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Faixa de temperatura de operação | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| On-State Resistance RDS(on) max at VGS=4.5V | — | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | — | 2.1 W |
| Power Dissipation at Tc | — | 37 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Integrated Schottky-like Diode | — | Yes (monolithic) |
| Avalanche Rated | — | 100% avalanche tested |
| Qualification | — | JEDEC qualified for target applications |
| Lead Plating | — | Pb-free |
| Livre de halogênio | — | Yes |