BSZ0901NSIATMA1 vs BSZ0904NSIATMA1 비교

다음의 상세 나란히 비교: BSZ0901NSIATMA1 제조: Infineon 및 BSZ0904NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0901NSIATMA1 BSZ0904NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.34 $0.49
Manufacturer Infineon Technologies —
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS (N-channel power MOSFET)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 25 A 18 A
Continuous Drain Current (ID) at Tc=25C 40 A 40 A
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
패키지 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3x3.3)
실장 유형 Surface Mount Surface Mount
핀 수 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th)]
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
동작 온도 범위 -55 C to +150 C (typical MOSFET range) -55C to +150C
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 상태 Compliant Compliant
Drain-Source Voltage (VDS) max — 30 V
On-State Resistance RDS(on) max at VGS=4.5V — 4 mOhm
On-State Resistance RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) at VGS=10V]
Power Dissipation at Ta — 2.1 W
Power Dissipation at Tc — 37 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Integrated Schottky-like Diode — Yes (monolithic)
Avalanche Rated — 100% avalanche tested
Qualification — JEDEC qualified for target applications
Lead Plating — Pb-free
할로겐 프리 — Yes

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