BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Vergleich

Detaillierter Direktvergleich von BSZ180P03NS3EGATMA1 von Infineon und BSZ15DC02KDHXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSZ180P03NS3EGATMA1 BSZ15DC02KDHXTMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,45 $0,74
Transistortyp P-Channel MOSFET N-Channel + P-Channel (complementary pair)
Technology OptiMOS P3 OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) - Ta 9 A —
Continuous Drain Current (ID) - Tc 39.5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance (RDS(on)) max 18 mΩ @ VGS = -10 V —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (QG) total [DATA_NEEDED: QG total] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 40 W —
Betriebstemperaturbereich -55°C to +150°C (TJ) —
Gehäuse PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
MSL-Level 1 —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Betriebs-Sperrschichttemperatur — -55 C to +175 C
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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