BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Comparación
Comparación detallada lado a lado de BSZ180P03NS3EGATMA1 por Infineon y BSZ15DC02KDHXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSZ180P03NS3EGATMA1 | BSZ15DC02KDHXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,45 | $0,74 |
| Tipo de transistor | P-Channel MOSFET | N-Channel + P-Channel (complementary pair) |
| Technology | OptiMOS P3 | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) - Ta | 9 A | — |
| Continuous Drain Current (ID) - Tc | 39.5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance (RDS(on)) max | 18 mΩ @ VGS = -10 V | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (QG) total | [DATA_NEEDED: QG total] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 40 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C (TJ) | — |
| Encapsulado | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ15DC02KDHXTMA1 |
| Drain-to-Source Voltage (VDS) Max | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 5.1 A |
| P-Channel Continuous Drain Current (ID) | — | 3.2 A |
| N-Channel RDS(on) Max | — | [DATA_NEEDED: N-ch RDS(on) value in mohm] |
| P-Channel RDS(on) Max | — | 55 mOhm (per Infineon part summary) |
| Gate Drive Level | — | Super Logic level, 2.5 V rated |
| Configuration | — | Common drain (back-to-back source pair) |
| Total Package Power Dissipation (PD) | — | 2.5 W @ 25 C (per DigiKey listing) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Avalanche Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | Yes / RoHS compliant |