BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 비교
다음의 상세 나란히 비교: BSZ180P03NS3EGATMA1 제조: Infineon 및 BSZ15DC02KDHXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ180P03NS3EGATMA1 | BSZ15DC02KDHXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.45 | $0.74 |
| 트랜지스터 유형 | P-Channel MOSFET | N-Channel + P-Channel (complementary pair) |
| Technology | OptiMOS P3 | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) - Ta | 9 A | — |
| Continuous Drain Current (ID) - Tc | 39.5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance (RDS(on)) max | 18 mΩ @ VGS = -10 V | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (QG) total | [DATA_NEEDED: QG total] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 40 W | — |
| 동작 온도 범위 | -55°C to +150°C (TJ) | — |
| 패키지 | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 1 | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ15DC02KDHXTMA1 |
| Drain-to-Source Voltage (VDS) Max | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 5.1 A |
| P-Channel Continuous Drain Current (ID) | — | 3.2 A |
| N-Channel RDS(on) Max | — | [DATA_NEEDED: N-ch RDS(on) value in mohm] |
| P-Channel RDS(on) Max | — | 55 mOhm (per Infineon part summary) |
| Gate Drive Level | — | Super Logic level, 2.5 V rated |
| Configuration | — | Common drain (back-to-back source pair) |
| Total Package Power Dissipation (PD) | — | 2.5 W @ 25 C (per DigiKey listing) |
| 동작 접합 온도 | — | -55 C to +175 C |
| Avalanche Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | Yes / RoHS compliant |