BSZ340N08NS3GATMA1 vs BSC340N08NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSZ340N08NS3GATMA1 von Infineon und BSC340N08NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ340N08NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,81 |
| Channel Type | N-channel | Single N-Channel |
| Drain-Source Voltage VDS | 80 V maximum | — |
| Continuous Drain Current ID | 6 A at Ta; 23 A at Tc | — |
| RDS(on) | 34 mOhm maximum at VGS = 10 V, ID = 12 A | — |
| Technology | OptiMOS 3 | OptiMOS 3 (N-Channel Trench) |
| Gate-Schwellenspannung | 3.5 V at 12 uA | — |
| Total Gate Charge Qg | 9.1 nC at 10 V | — |
| Output Capacitance Coss | 630 pF at 40 V | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 32 W | — |
| Junction Temperature Range | -55C to +150C | — |
| Gehäuse | PG-TSDSON-8, 3.3 x 3.3 mm PQFN family package | PG-TDSON-8-5 (SuperSO8 5x6) |
| Montageart | Surface mount | Surface Mount |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| RoHS-Status | RoHS compliant | — |
| Automotive Qualification | [DATA_NEEDED: automotive qualification status] | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| Pinout | [DATA_NEEDED: complete manufacturer pin mapping] | — |
| Safe Operating Area | [DATA_NEEDED: safe operating area graph] | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| MSL-Level | — | 1 |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |