BSZ340N08NS3GATMA1 vs BSC340N08NS3GATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ340N08NS3GATMA1 par Infineon et BSC340N08NS3GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ340N08NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,81 |
| Channel Type | N-channel | Single N-Channel |
| Drain-Source Voltage VDS | 80 V maximum | — |
| Continuous Drain Current ID | 6 A at Ta; 23 A at Tc | — |
| RDS(on) | 34 mOhm maximum at VGS = 10 V, ID = 12 A | — |
| Technology | OptiMOS 3 | OptiMOS 3 (N-Channel Trench) |
| Tension de seuil de grille | 3.5 V at 12 uA | — |
| Total Gate Charge Qg | 9.1 nC at 10 V | — |
| Output Capacitance Coss | 630 pF at 40 V | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 32 W | — |
| Junction Temperature Range | -55C to +150C | — |
| Boîtier | PG-TSDSON-8, 3.3 x 3.3 mm PQFN family package | PG-TDSON-8-5 (SuperSO8 5x6) |
| Type de montage | Surface mount | Surface Mount |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Statut RoHS | RoHS compliant | — |
| Automotive Qualification | [DATA_NEEDED: automotive qualification status] | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| Pinout | [DATA_NEEDED: complete manufacturer pin mapping] | — |
| Safe Operating Area | [DATA_NEEDED: safe operating area graph] | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Plage de température de fonctionnement | — | -55C to +150C |
| Niveau MSL | — | 1 |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |