BTS3035TFATMA1 vs BTN9960LVAUMA1 Vergleich

Detaillierter Direktvergleich von BTS3035TFATMA1 von Infineon und BTN9960LVAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTS3035TFATMA1 BTN9960LVAUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Motor Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $2,44
Product Type Low-Side Power Switch Integrated Half-Bridge Motor Driver
Technology N-Channel MOSFET —
Number of Channels 1 —
Input Type CMOS Logic Level —
Continuous Drain Current 5 A —
On-Resistance (RDS(on)) 30 mOhm (typical) —
Drain-Source Voltage (VDS) Max 40 V —
Operating Voltage Range 12 V nominal (load-dump tolerant to 40 V) —
Fault Protection Over-current, Short-circuit, Over-temperature, ESD —
Status Feedback Yes (open-drain diagnostic output) —
Reverse Battery Protection Integrated —
Betriebstemperaturbereich -40C to +150C (junction) -40C to +150C
Gehäuse PG-TO252-3-313 (DPAK) PG-HSOF-7-1
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS-Status Compliant Compliant
Automotive Grade AEC-Q100 qualified —
Topologie — P-channel high-side + N-channel low-side MOSFET with integrated driver IC
Path Resistance (typ @ 25C) — 9.7 mOhm
Overcurrent Detection Threshold — 35 A
Supply Voltage Range (operating) — 8 V to 18 V
Supply Voltage Range (max rating) — 40 V
Logic Input Low Voltage (max) — 1.3 V
Logic Input High Voltage (min) — 1.6 V
Turn-On Rise Time (typ) — 2.5 us
Turn-Off Fall Time (typ) — 250 ns
Dead Time (typ) — 250 ns
Standby Current (max) — 3.3 uA
Propagation Delay (typ) — 3.6 us
AEC-Q100 Qualification — Grade 1 qualified
Protection Features — Under-voltage, Over-current, Short-circuit, Over-temperature, Interleaved (shoot-through), Enable shutdown, Dead-time control

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