BTS3035TFATMA1 vs BTN9960LVAUMA1 비교

다음의 상세 나란히 비교: BTS3035TFATMA1 제조: Infineon 및 BTN9960LVAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS3035TFATMA1 BTN9960LVAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Motor Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $2.44
Product Type Low-Side Power Switch Integrated Half-Bridge Motor Driver
Technology N-Channel MOSFET —
Number of Channels 1 —
Input Type CMOS Logic Level —
Continuous Drain Current 5 A —
On-Resistance (RDS(on)) 30 mOhm (typical) —
Drain-Source Voltage (VDS) Max 40 V —
Operating Voltage Range 12 V nominal (load-dump tolerant to 40 V) —
Fault Protection Over-current, Short-circuit, Over-temperature, ESD —
Status Feedback Yes (open-drain diagnostic output) —
Reverse Battery Protection Integrated —
동작 온도 범위 -40C to +150C (junction) -40C to +150C
패키지 PG-TO252-3-313 (DPAK) PG-HSOF-7-1
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS 상태 Compliant Compliant
Automotive Grade AEC-Q100 qualified —
토폴로지 — P-channel high-side + N-channel low-side MOSFET with integrated driver IC
Path Resistance (typ @ 25C) — 9.7 mOhm
Overcurrent Detection Threshold — 35 A
Supply Voltage Range (operating) — 8 V to 18 V
Supply Voltage Range (max rating) — 40 V
Logic Input Low Voltage (max) — 1.3 V
Logic Input High Voltage (min) — 1.6 V
Turn-On Rise Time (typ) — 2.5 us
Turn-Off Fall Time (typ) — 250 ns
Dead Time (typ) — 250 ns
Standby Current (max) — 3.3 uA
Propagation Delay (typ) — 3.6 us
AEC-Q100 Qualification — Grade 1 qualified
Protection Features — Under-voltage, Over-current, Short-circuit, Over-temperature, Interleaved (shoot-through), Enable shutdown, Dead-time control

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