BTS621L1E3128AAUMA1 vs BTS621L1E3128ABUMA1 Vergleich
Detaillierter Direktvergleich von BTS621L1E3128AAUMA1 von Infineon und BTS621L1E3128ABUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTS621L1E3128AAUMA1 - 8.5A Smart High-Side Switch 24V | Infineon
BTS621L1E3128AAUMA1 ✓ AktivInfineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BTS621L1E3128AAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,62 | $2,45 |
| Product Type | Smart High-Side Power Switch (PROFET) | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| Rds(on) per Channel (typ) | 8 mΩ | — |
| Continuous Load Current per Channel | 8.5 A | — |
| Operating Voltage Range | 5 V to 34 V | — |
| Load Dump Protection | Up to 42 V | — |
| Input Logic Level | CMOS-compatible, ground-referenced | — |
| Diagnostic Feedback | Current-mirror IS pin (proportional load current sense) | Yes - open-load and overtemperature reporting |
| On-State Resistance | 8 mΩ typical | — |
| Gehäuse | PG-TO263-7-2 (DPAK-style, 7 leads + tab) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 C to +150 C (junction) | — |
| Technology | Smart SIPMOS (vertical N-channel FET + charge pump + logic) | Smart SIPMOS (monolithic) |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage, reverse battery | — |
| Automotive Qualification | AEC-Q100 (PROFET family) | — |
| Target Voltage Class | 24 V commercial vehicle systems (trucks, tractors, 24V industrial) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Betriebstemperaturbereich | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| RoHS / Lead-Free | — | Compliant (Pb-free) |