BTS621L1E3128AAUMA1 vs BTS621L1E3128ABUMA1 비교

다음의 상세 나란히 비교: BTS621L1E3128AAUMA1 제조: Infineon 및 BTS621L1E3128ABUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS621L1E3128AAUMA1 BTS621L1E3128ABUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.62 $2.45
Product Type Smart High-Side Power Switch (PROFET) Dual-channel smart high-side power switch (PROFET)
Number of Channels 2 2 (dual high-side, 1:1)
Rds(on) per Channel (typ) 8 mΩ —
Continuous Load Current per Channel 8.5 A —
Operating Voltage Range 5 V to 34 V —
Load Dump Protection Up to 42 V —
Input Logic Level CMOS-compatible, ground-referenced —
Diagnostic Feedback Current-mirror IS pin (proportional load current sense) Yes - open-load and overtemperature reporting
On-State Resistance 8 mΩ typical —
패키지 PG-TO263-7-2 (DPAK-style, 7 leads + tab) PG-TO263-7-2 (D2PAK-7, exposed tab)
실장 유형 Surface Mount Surface Mount
동작 온도 -40 C to +150 C (junction) —
Technology Smart SIPMOS (vertical N-channel FET + charge pump + logic) Smart SIPMOS (monolithic)
Protection Features Overload, short-circuit, over-temperature, over-voltage, reverse battery —
Automotive Qualification AEC-Q100 (PROFET family) —
Target Voltage Class 24 V commercial vehicle systems (trucks, tractors, 24V industrial) —
Lead-Free / RoHS Yes (compliant) —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
동작 온도 범위 — -40 °C to +150 °C junction
Input Logic Compatibility — CMOS-compatible, ground-referenced
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
RoHS / Lead-Free — Compliant (Pb-free)

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